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"Temperature Dependence of the Electron and Hole Scattering Mechanisms in ..."

Susanna Reggiani, Maria Cristina Vecchi, Massimo Rudan (1998)

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DOI: 10.1155/1998/41638

access: open

type: Journal Article

metadata version: 2023-05-08

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  - https://dblp.org/rec/journals/vlsi/ReggianiVR98
Susanna Reggiani, Maria Cristina Vecchi, Massimo Rudan:
Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE. VLSI Design 8(1-4): 361-365 (1998)

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