Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"High Restore Yield NVSRAM Structures With Dual Complementary RRAM Devices ..."

Zhiting Lin et al. (2023)

> Home

Details and statistics

DOI: 10.1109/TVLSI.2023.3242300

access: closed

type: Journal Article

metadata version: 2023-05-03

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tvlsi/LinCSWZLP23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tvlsi/LinCSWZLP23
Zhiting Lin, Min Chen, Peng Sun, Xiulong Wu, Qiang Zhao, Wenjuan Lu, Chunyu Peng:
High Restore Yield NVSRAM Structures With Dual Complementary RRAM Devices for High-Speed Applications. IEEE Trans. Very Large Scale Integr. Syst. 31(4): 522-531 (2023)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.