"Impact of Write Pulse and Process Variation on 22 nm FinFET-Based STT-RAM ..."

Cong Xu et al. (2015)

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DOI: 10.1109/TMSCS.2015.2509960

access: closed

type: Journal Article

metadata version: 2024-07-08

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Cong Xu, Yang Zheng, Dimin Niu, Xiaochun Zhu, Seung-Hyuk Kang, Yuan Xie:
Impact of Write Pulse and Process Variation on 22 nm FinFET-Based STT-RAM Design: A Device-Architecture Co-Optimization Approach. IEEE Trans. Multi Scale Comput. Syst. 1(4): 195-206 (2015)

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