"A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications."

Xuan Li et al. (2017)

> Home

Details and statistics

DOI: 10.1109/TIE.2017.2703910

access: closed

type: Journal Article

metadata version: 2021-10-19

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tie/LiJHGDZS17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tie/LiJHGDZS17
Xuan Li, Junning Jiang, Alex Q. Huang, Suxuan Guo, Xiaochuan Deng, Bo Zhang, Xu She:
A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications. IEEE Trans. Ind. Electron. 64(10): 8268-8276 (2017)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.