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"The Impact of Temperature and Switching Rate on Dynamic Transients of ..."

Saeed Jahdi et al. (2020)

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DOI: 10.1109/TIE.2019.2922918

access: closed

type: Journal Article

metadata version: 2020-05-22

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  - https://dblp.org/rec/journals/tie/JahdiHSM20
Saeed Jahdi, Mohammad Hedayati, Bernard H. Stark, Phil H. Mellor:
The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation. IEEE Trans. Ind. Electron. 67(6): 4556-4566 (2020)

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