"Performance and Reliability Review of 650 V and 900 V Silicon and SiC ..."

Jose Angel Ortiz Gonzalez et al. (2020)

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DOI: 10.1109/TIE.2019.2945299

access: open

type: Journal Article

metadata version: 2023-07-27

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Jose Angel Ortiz Gonzalez, Ruizhu Wu, Saeed Jahdi, Olayiwola Alatise:
Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs. IEEE Trans. Ind. Electron. 67(9): 7375-7385 (2020)

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