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"Exploiting Asymmetry in eDRAM Errors for Redundancy-Free Error-Tolerant ..."

Shanshan Liu et al. (2021)

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DOI: 10.1109/TETC.2019.2960491

access: closed

type: Journal Article

metadata version: 2023-05-10

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Shanshan Liu, Pedro Reviriego, Jing Guo, Jie Han, Fabrizio Lombardi:
Exploiting Asymmetry in eDRAM Errors for Redundancy-Free Error-Tolerant Design. IEEE Trans. Emerg. Top. Comput. 9(4): 2064-2075 (2021)

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