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"Novel Wideband Millimeter-Wave GaN Power Amplifier Design Using ..."

Jie Shi et al. (2023)

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DOI: 10.1109/TCSII.2023.3291383

access: closed

type: Journal Article

metadata version: 2024-01-13

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  - https://dblp.org/rec/journals/tcasII/ShiFYSC23
Jie Shi, Xiaohu Fang, Hao Yu, Jiangwei Sui, Kwok-Keung Michael Cheng:
Novel Wideband Millimeter-Wave GaN Power Amplifier Design Using Transistors With Large Drain Capacitance and High Optimum Load Impedance. IEEE Trans. Circuits Syst. II Express Briefs 70(12): 4309-4313 (2023)

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