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"A 36.2 dB High SNR and PVT/Leakage-Robust eDRAM Computing-In-Memory Macro ..."

Sangwoo Ha et al. (2022)

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DOI: 10.1109/TCSII.2022.3159808

access: closed

type: Journal Article

metadata version: 2022-05-18

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Sangwoo Ha, Sangjin Kim, Donghyeon Han, Soyeon Um, Hoi-Jun Yoo:
A 36.2 dB High SNR and PVT/Leakage-Robust eDRAM Computing-In-Memory Macro With Segmented BL and Reference Cell Array. IEEE Trans. Circuits Syst. II Express Briefs 69(5): 2433-2437 (2022)

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