"A High-Temperature Model for GaN-HEMT Transistors and its Application to ..."

Jebreel M. Salem, Fariborz Lohrabi Pour, Dong Sam Ha (2021)

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DOI: 10.1109/TCSI.2020.3039907

access: closed

type: Journal Article

metadata version: 2021-02-11

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Jebreel M. Salem, Fariborz Lohrabi Pour, Dong Sam Ha:
A High-Temperature Model for GaN-HEMT Transistors and its Application to Resistive Mixer Design. IEEE Trans. Circuits Syst. I Regul. Pap. 68(2): 581-591 (2021)

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