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"Design of a High Temperature 2.37 GHz Voltage-Controlled Oscillator With ..."

Nathan Turner, Fariborz Lohrabi Pour, Dong Sam Ha (2020)

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DOI: 10.1109/TCSI.2020.3010768

access: closed

type: Journal Article

metadata version: 2020-12-17

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Nathan Turner, Fariborz Lohrabi Pour, Dong Sam Ha:
Design of a High Temperature 2.37 GHz Voltage-Controlled Oscillator With GaN-on-SiC HEMTs. IEEE Trans. Circuits Syst. 67-I(12): 5153-5161 (2020)

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