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"A 40-nm Sub-Threshold 5T SRAM Bit Cell With Improved Read and Write Stability."

Adam Teman et al. (2012)

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DOI: 10.1109/TCSII.2012.2231020

access: closed

type: Journal Article

metadata version: 2022-10-02

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  - https://dblp.org/rec/journals/tcas/TemanMMF12
Adam Teman, Anatoli Mordakhay, Janna Mezhibovsky, Alexander Fish:
A 40-nm Sub-Threshold 5T SRAM Bit Cell With Improved Read and Write Stability. IEEE Trans. Circuits Syst. II Express Briefs 59-II(12): 873-877 (2012)

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