"Design Methodology for Highly Reliable, High Performance ReRAM and ..."

Shuhei Tanakamaru et al. (2015)

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DOI: 10.1109/TCSI.2014.2370171

access: closed

type: Journal Article

metadata version: 2020-05-22

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Shuhei Tanakamaru, Hiroki Yamazawa, Tsukasa Tokutomi, Sheyang Ning, Ken Takeuchi:
Design Methodology for Highly Reliable, High Performance ReRAM and 3-Bit/Cell MLC NAND Flash Solid-State Storage. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(3): 844-853 (2015)

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