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"A 270-mV 6T SRAM Using Row-Based Dual-Phase VDD Control in ..."

Chen-Hsuan Lu et al. (2020)

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DOI: 10.1109/TCSI.2020.3019578

access: closed

type: Journal Article

metadata version: 2021-02-11

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Chen-Hsuan Lu, Ying-Tuan Hsu, Bing-Chen Wu, Tsung-Te Liu:
A 270-mV 6T SRAM Using Row-Based Dual-Phase V_DD Control in 28-nm CMOS. IEEE Trans. Circuits Syst. 67-I(12): 4774-4783 (2020)

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