"Layout Aware Optimization Methodology for SOT-MRAM Based on Technically ..."

Chao Wang et al. (2023)

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DOI: 10.1109/TCAD.2022.3207662

access: closed

type: Journal Article

metadata version: 2023-06-26

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Chao Wang, Zhaohao Wang, Zhongkui Zhang, Jiagao Feng, Youguang Zhang, Weisheng Zhao:
Layout Aware Optimization Methodology for SOT-MRAM Based on Technically Feasible Top-Pinned Magnetic Tunnel Junction Process. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(5): 1463-1476 (2023)

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