"A circuit simulation model for bipolar-induced breakdown in MOSFET."

Mario Pinto-Guedes, Philip C. Chan (1988)

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DOI: 10.1109/43.3159

access: closed

type: Journal Article

metadata version: 2020-09-24

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Mario Pinto-Guedes, Philip C. Chan:
A circuit simulation model for bipolar-induced breakdown in MOSFET. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7(2): 289-294 (1988)

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