"Universality of mobility-gate field characteristics of electrons in the ..."

Shiuh-Wuu Lee (1989)

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DOI: 10.1109/43.31529

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type: Journal Article

metadata version: 2020-09-24

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Shiuh-Wuu Lee:
Universality of mobility-gate field characteristics of electrons in the inversion charge layer and its application in MOSFET modeling. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(7): 724-730 (1989)

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