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"Modeling of nMOS transistors for simulation of hot-carrier-induced device ..."

Yusuf Leblebici, Sung-Mo Kang (1992)

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DOI: 10.1109/43.124402

access: closed

type: Journal Article

metadata version: 2020-09-24

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Yusuf Leblebici, Sung-Mo Kang:
Modeling of nMOS transistors for simulation of hot-carrier-induced device and circuit degradation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 11(2): 235-246 (1992)

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