"NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging ..."

Xiangyu Dong et al. (2012)

> Home

Details and statistics

DOI: 10.1109/TCAD.2012.2185930

access: closed

type: Journal Article

metadata version: 2025-02-07

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tcad/DongXXJ12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tcad/DongXXJ12
Xiangyu Dong, Cong Xu, Yuan Xie, Norman P. Jouppi:
NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 31(7): 994-1007 (2012)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.