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"Ultra low power offering 14 nm bulk double gate FinFET based SRAM cells."

Damodhar Rao M., Y. V. Narayana, V. V. K. D. V. Prasad (2022)

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DOI: 10.1016/J.SUSCOM.2022.100685

access: closed

type: Journal Article

metadata version: 2023-09-30

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Damodhar Rao M., Y. V. Narayana, V. V. K. D. V. Prasad:
Ultra low power offering 14 nm bulk double gate FinFET based SRAM cells. Sustain. Comput. Informatics Syst. 35: 100685 (2022)

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