"The Effect of Nitrogen Annealing on the Resistive Switching ..."

Zhiqiang Yu et al. (2023)

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DOI: 10.3390/S23073480

access: open

type: Journal Article

metadata version: 2023-04-29

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  - https://dblp.org/rec/journals/sensors/YuHXCQLSS23
Zhiqiang Yu, Xu Han, Jiamin Xu, Cheng Chen, Xinru Qu, Baosheng Liu, Zijun Sun, Tangyou Sun:
The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device. Sensors 23(7): 3480 (2023)

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