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"T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband ..."
Behnam Samadpoor Rikan et al. (2022)
- Behnam Samadpoor Rikan
, David Kim, Kyung-Duk Choi, Arash Hejazi
, Joon-Mo Yoo, YoungGun Pu, Seokkee Kim, Hyungki Huh, Yeonjae Jung, Kang-Yoon Lee:
T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process. Sensors 22(2): 507 (2022)
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