"Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT ..."

Pin-Guang Chen et al. (2018)

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DOI: 10.3390/S18092795

access: open

type: Journal Article

metadata version: 2018-11-24

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Pin-Guang Chen, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou, Min-Hung Lee:
Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications. Sensors 18(9): 2795 (2018)

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