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"Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics."

Inanc Meric et al. (2013)

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DOI: 10.1109/JPROC.2013.2257634

access: closed

type: Journal Article

metadata version: 2022-06-16

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Inanc Meric, Cory R. Dean, Nicholas Petrone, Lei Wang, James C. Hone, Philip Kim, Kenneth L. Shepard:
Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics. Proc. IEEE 101(7): 1609-1619 (2013)

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