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"Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing."
Sang-Myeon Han et al. (2005)
- Sang-Myeon Han, Min-Cheol Lee, Moon-Young Shin, Joong-Hyun Park, Min-Koo Han:
Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing. Proc. IEEE 93(7): 1297-1305 (2005)
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