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"The synergetic effects of high temperature gate bias and total ionization ..."

Teng Zhang, Bruno Allard, Jinshun Bi (2018)

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DOI: 10.1016/J.MICROREL.2018.06.046

access: closed

type: Journal Article

metadata version: 2023-10-25

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Teng Zhang, Bruno Allard, Jinshun Bi:
The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. Microelectron. Reliab. 88-90: 631-635 (2018)

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