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"Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility ..."

Patrick G. Whiting et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.01.007

access: closed

type: Journal Article

metadata version: 2021-03-04

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Patrick G. Whiting, M. R. Holzworth, A. G. Lind, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren, Y. Xin:
Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 70: 32-40 (2017)

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