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"Doping compensation for increased robustness of fast recovery silicon diodes."

J. Vobecký, V. Záhlava, V. Komarnitskyy (2010)

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DOI: 10.1016/J.MICROREL.2009.09.014

access: closed

type: Journal Article

metadata version: 2020-02-22

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J. Vobecký, V. Záhlava, V. Komarnitskyy:
Doping compensation for increased robustness of fast recovery silicon diodes. Microelectron. Reliab. 50(1): 32-38 (2010)

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