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"Suppression of boron penetration through thin gate oxides by nitrogen ..."

S. Strobel et al. (2001)

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DOI: 10.1016/S0026-2714(01)00072-5

access: closed

type: Journal Article

metadata version: 2020-02-22

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S. Strobel, Anton J. Bauer, Matthias Beichele, Heiner Ryssel:
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices. Microelectron. Reliab. 41(7): 1085-1088 (2001)

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