"A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including ..."

Omnia Samy et al. (2016)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2016.11.004

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/SamyAIZ16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/SamyAIZ16
Omnia Samy, Hamdy Abdelhamid, Yehea Ismail, Abdelhalim Zekry:
A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs). Microelectron. Reliab. 67: 82-88 (2016)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.