"Device reliability study of AlGaN/GaN high electron mobility transistors ..."

Hemant Rao, Gijs Bosman (2010)

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DOI: 10.1016/J.MICROREL.2010.07.073

access: closed

type: Journal Article

metadata version: 2020-02-22

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Hemant Rao, Gijs Bosman:
Device reliability study of AlGaN/GaN high electron mobility transistors under high gate and channel electric fields via low frequency noise spectroscopy. Microelectron. Reliab. 50(9-11): 1528-1531 (2010)

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