"Low power resistive switching memory using Cu metallic filament in ..."

Sk. Ziaur Rahaman, Siddheswar Maikap (2010)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2010.01.022

access: closed

type: Journal Article

metadata version: 2022-11-11

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/RahamanM10
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/RahamanM10
Sk. Ziaur Rahaman, Siddheswar Maikap:
Low power resistive switching memory using Cu metallic filament in Ge_0.2Se_0.8 solid-electrolyte. Microelectron. Reliab. 50(5): 643-646 (2010)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.