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"A study on the electrical characteristics of InGaZnO thin-film transistor ..."

L. X. Qian, P. T. Lai (2014)

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DOI: 10.1016/J.MICROREL.2014.04.011

access: closed

type: Journal Article

metadata version: 2020-02-22

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L. X. Qian, P. T. Lai:
A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases. Microelectron. Reliab. 54(11): 2396-2400 (2014)

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