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"Robustness of 1.2 kV SiC MOSFET devices."

D. Othman et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.07.072

access: closed

type: Journal Article

metadata version: 2021-10-14

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  - https://dblp.org/rec/journals/mr/OthmanLBKIB13
D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene:
Robustness of 1.2 kV SiC MOSFET devices. Microelectron. Reliab. 53(9-11): 1735-1738 (2013)

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