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"Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide."

H. Jörg Osten et al. (2001)

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DOI: 10.1016/S0026-2714(01)00054-3

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/OstenLMZ01
H. Jörg Osten, J. P. Liu, H.-J. Müssig, P. Zaumseil:
Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide. Microelectron. Reliab. 41(7): 991-994 (2001)

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