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"Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward ..."
Matteo Meneghini et al. (2016)
- Matteo Meneghini
, Oliver Hilt
, Clément Fleury
, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser
, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni
, Gaudenzio Meneghesso, Stefano Dalcanale:
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58: 177-184 (2016)
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