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"Trapping and reliability issues in GaN-based MIS HEMTs with partially ..."

Gaudenzio Meneghesso et al. (2016)

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DOI: 10.1016/J.MICROREL.2015.11.024

access: closed

type: Journal Article

metadata version: 2024-05-07

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Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni:
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. 58: 151-157 (2016)

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