Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Gate oxide degradation of SiC MOSFET under short-circuit aging tests."

Safa Mbarek et al. (2016)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2016.07.132

access: closed

type: Journal Article

metadata version: 2022-03-23

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/MbarekFDML16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/MbarekFDML16
Safa Mbarek, François Fouquet, Pascal Dherbécourt, Mohamed Masmoudi, Olivier Latry:
Gate oxide degradation of SiC MOSFET under short-circuit aging tests. Microelectron. Reliab. 64: 415-418 (2016)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.