"Bias temperature instabilities in 4H SiC metal oxide semiconductor field ..."

Patrick M. Lenahan et al. (2018)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2017.12.010

access: closed

type: Journal Article

metadata version: 2022-02-25

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/LenahanAWL18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/LenahanAWL18
Patrick M. Lenahan, Mark A. Anders, R. J. Waskiewicz, Aivars J. Lelis:
Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance. Microelectron. Reliab. 81: 1-6 (2018)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.