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"Bias temperature instabilities in 4H SiC metal oxide semiconductor field ..."

Patrick M. Lenahan et al. (2018)

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DOI: 10.1016/J.MICROREL.2017.12.010

access: closed

type: Journal Article

metadata version: 2022-02-25

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Patrick M. Lenahan, Mark A. Anders, R. J. Waskiewicz, Aivars J. Lelis:
Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance. Microelectron. Reliab. 81: 1-6 (2018)

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