"Breakdown and reliability of p-MOS devices with stacked RPECVD ..."

Yi-Mu Lee, Yider Wu, Gerald Lucovsky (2004)

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DOI: 10.1016/J.MICROREL.2003.07.002

access: closed

type: Journal Article

metadata version: 2020-02-22

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Yi-Mu Lee, Yider Wu, Gerald Lucovsky:
Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress. Microelectron. Reliab. 44(2): 207-212 (2004)

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