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"Transient stress characterization of AlGaN/GaN HEMTs due to electrical and ..."

Jason P. Jones et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.08.019

access: closed

type: Journal Article

metadata version: 2022-10-02

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Jason P. Jones, Eric Heller, Donald Dorsey, Samuel Graham:
Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects. Microelectron. Reliab. 55(12): 2634-2639 (2015)

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