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"A new high-voltage tolerant I/O for improving ESD robustness."

J. T. Jang et al. (2006)

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DOI: 10.1016/J.MICROREL.2006.07.033

access: closed

type: Journal Article

metadata version: 2020-02-22

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J. T. Jang, Y. C. Kim, W. H. Bong, E. K. Kwon, B. J. Kwon, J. S. Jeon, H. G. Kim, I. H. Son:
A new high-voltage tolerant I/O for improving ESD robustness. Microelectron. Reliab. 46(9-11): 1634-1637 (2006)

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