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"Electrical stress effect on RF power characteristics of SiGe ..."

Sheng-Yi Huang et al. (2008)

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DOI: 10.1016/J.MICROREL.2007.05.008

access: closed

type: Journal Article

metadata version: 2020-02-22

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Sheng-Yi Huang, Kun-Ming Chen, Guo-Wei Huang, Cheng-Chou Hung, Wen-Shiang Liao, Chun-Yen Chang:
Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors. Microelectron. Reliab. 48(2): 193-199 (2008)

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