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"Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with ..."

Izumi Hirano et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.05.010

access: closed

type: Journal Article

metadata version: 2020-02-22

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Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Masakazu Goto, Koji Nagatomo, Seiji Inumiya, Katsuyuki Sekine, Yuichiro Mitani, Kikuo Yamabe:
Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing. Microelectron. Reliab. 53(12): 1868-1874 (2013)

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