"Degradation of electrical performance and floating body effect in ultra ..."

Kiyoteru Hayama et al. (2004)

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DOI: 10.1016/J.MICROREL.2004.07.063

access: closed

type: Journal Article

metadata version: 2020-02-22

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Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, Abdelkarim Mercha, Eddy Simoen, Cor Claeys, Joan Marc Rafí, Michael Kokkoris:
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. Microelectron. Reliab. 44(9-11): 1721-1726 (2004)

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