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"Resistive switching properties of a thin SiO2 layer with ..."

M. S. Hadi et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.06.013

access: closed

type: Journal Article

metadata version: 2021-10-14

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M. S. Hadi, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima:
Resistive switching properties of a thin SiO₂ layer with CeO_x buffer layer on n⁺ and p⁺ Si bottom electrodes. Microelectron. Reliab. 63: 42-45 (2016)

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