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"High temperature pulsed-gate robustness testing of SiC power MOSFETs."

Asad Fayyaz, Alberto Castellazzi (2015)

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DOI: 10.1016/J.MICROREL.2015.06.141

access: closed

type: Journal Article

metadata version: 2020-02-22

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Asad Fayyaz, Alberto Castellazzi:
High temperature pulsed-gate robustness testing of SiC power MOSFETs. Microelectron. Reliab. 55(9-10): 1724-1728 (2015)

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