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"Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, ..."

Ming-Long Fan et al. (2014)

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DOI: 10.1016/J.MICROREL.2013.12.026

access: closed

type: Journal Article

metadata version: 2020-02-22

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Ming-Long Fan, Shao-Yu Yang, Vita Pi-Ho Hu, Yin-Nien Chen, Pin Su, Ching-Te Chuang:
Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits. Microelectron. Reliab. 54(4): 698-711 (2014)

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