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"Low frequency noise and reliability properties pf 0.12 mum CMOS devices ..."

M. Fadlallah et al. (2001)

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DOI: 10.1016/S0026-2714(01)00141-X

access: closed

type: Journal Article

metadata version: 2023-09-30

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M. Fadlallah, Arkadiusz Szewczyk, C. Giannakopoulos, B. Cretu, Frederic Monsieur, T. Devoivre, Jalal Jomaah, Gérard Ghibaudo:
Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta₂O₅ as gate dielectrics. Microelectron. Reliab. 41(9-10): 1361-1366 (2001)

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