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"Analysis of the degradation mechanisms occurring in the topside ..."

Nausicaa Dornic et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.07.041

access: closed

type: Journal Article

metadata version: 2021-02-05

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Nausicaa Dornic, Ali Ibrahim, Zoubir Khatir, Son-Ha Tran, Jean-Pierre Ousten, Jeffrey Ewanchuk, Stefan Mollov:
Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling. Microelectron. Reliab. 88-90: 462-469 (2018)

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